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July 14, 2010
ADT Awarded
Grant to develop the next generation of CMP pad conditioners.
June 30, 2010
VISIT ADT at SEMICON
WEST, July 13-15, in the Extreme Electronics section, booth #2536.
June 21, 2010
ADT co-founder and Argonne scientist, Orlando Auciello, announced as Distinguished
Fellow by the U.S. Department of Energy.
June 16, 2010
ADT publishes groundbreaking work in the May 2010 issue of the journal ACS
Nano. Read the full press
release here.
June 11, 2010
Neil Kane of Advanced Diamond Technologies testifies before House
Subcommittee on improving technology transfer.
May 26, 2010
The prestigious journal Small
publishes paper on extreme wear properties of NaDiaProbes.
May 19, 2010
ADT scientists co-author an article on the wear resistance of diamond nanoprobe
tips in ACS
Nano.
May 18, 2010
John Carlisle, CTO, to present "Diamond MEMS: from the lab to the foundry"
at the MEMS CTO Meeting
on June 21st in Anaheim, California.
May 11, 2010
Dr. Diane P. Hickey & Dr. John Carlisle of ADT discuss diamond advances
for micro manufacturing in EuroAsia
Semiconductor magazine.
See more news items...
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What is UNCD < Technical Description |
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| Image Caption |
UNCD®, motivated by the Ultrananocrystalline Diamond material originally developed
at Argonne National Laboratory, has been extended by ADT to a family
of diamond materials which finally enables diamond as a true engineering
material.
A key characteristic of all UNCD films is their phase purity.
None of the UNCD films consists of a mixture of diamond and graphitic
phases although UNCD Aqua 25 has volume fractions of grain
boundaries that amount to 10% of the film by volume and consist
of carbon in several different bonding states including sp2
(graphitic). UNCD films are not diamond-like carbons or "NCD"
(for nanocrystalline diamond) films reported in the literature.
It is this unique structural property of UNCD films that allows
attributes such as optical transparency, electrical and thermal
conductivity, and film stress to be controlled in ways not possible
with other materials.
ADT’s techniques also allow the structure-properties of UNCD to
be tuned. This is done by changing the growth process to increase
the grain size and to introduce select impurities (dopants like
boron, nitrogen, etc.) to engineer UNCD's electrical, thermal and
optical properties. Although the typical growth temperatures are
700-800 °C, UNCD films can be deposited at much lower temperatures
down to 350 °C. UNCD can be grown on a wide variety of substrates,
including Si, SiO2 (thin
oxide films, quartz, Corning glass), refractory metals (Ti, Ta,
W, Mo), as well as SiC and SiN. Continuous films can be grown to
render the substrate impervious to chemical attack from strong acid
solutions such as HF and HNO3.
Thanks to recent advances in deposition technology, UNCD films can
be routinely deposited onto silicon wafers up to 200 mm in size.
Below are some of the material properties of UNCD that enable its
unique characteristics.
- Mechanical Properties. Most UNCD films are essentially
equivalent to natural diamond in hardness, Young’s modulus,
fracture toughness and strength.
- Tribological Properties. When smooth, UNCD exhibits
friction coefficients as low as 0.03 in air. This, combined
with the extreme hardness and good adhesion properties, allows
for a wide range of applications of UNCD as a tribomechanical
coating.
- Transport Properties. By altering the deposition
process, the electrical conductivity of UNCD films can be changed
over eight orders of magnitude. UNCD Brown films exhibit the
highest N-type conductivity reported for a phase-pure diamond
film and are more conductive than any doped microcrystalline
diamond film or diamond-like carbon film.
- Electron Field Emission Properties. UNCD films
consistently exhibit very low threshold fields for field electron
emission. In addition, the field electron emission is
very stable even when the surface is exposed to 10-4
Torr of oxygen or hydrogen. Emission currents as high
as 100 µA from a single UNCD-coated silicon microtip have been
observed. Emission currents as high as 1 mA have been
achieved from conformally-coated arrays of silicon microtips.
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Copyright 2004-2009. Advanced Diamond Technologies, Inc.
429 B Weber Road #286, Romeoville, IL 60446. Phone: 815-293-0900
UNCD is a registered trademark of; NaDiaProbe, DoSi, DOI, We Solve Hard Problems,
We Haven't Even Scratched the Surface, Diamond is an Engineering Material and
the ADT logo are trademarks of Advanced Diamond Technologies, Inc.
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